This resulted in the lowered function purpose and the development of the Schottky Get in touch with amongst the BrGO and n-form Si substrate. As a result of the higher proportion of B-C and B-C3 bonding during the BrGO/Si machine than that within the rGO/Si, the diminished Schottky barrier height https://www.directivepublications.org/journal-of-applied-nanoscience/